NXP Semiconductors A5M34TG040-TC
The A5M34TG040-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field-proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems.| Part No. | A5M34TG040-TC |
|---|---|
| Datasheet | A5M34TG040-TC Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier Module |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier● Advanced high performance in-package Doherty
● Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Reduced memory effects for improved linearized error vector magnitude 3 Typical performance Table 1. 3300–3670 MHz — Typical LTE performance Pout = 10.7 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.[1] Carrier Center Gain ACPR PAE Frequency (dB) (dBc) (%) 3310 MHz 31.2 –30.7 42.1 3500 MHz 31.0 –30.8 46.0 3660 MHz 30.7 –31.4 48.0 [1] All data measured with device soldered to NXP reference circuit. NXP Semiconductors 4 Pinning information A5M34TG040-TC Airfast Power Amplifier Module Figure 1. Pin configuration A5M34TG040-TC Product data sheet All information provided in this document is subject to legal disclaimers.
