NXP Semiconductors A5M34TG140-TC
The A5M34TG140−TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. The field−proven LDMOS and GaN on SiC power amplifiers are designed for TDD LTE and 5G systems.| Part No. | A5M34TG140-TC |
|---|---|
| Datasheet | A5M34TG140-TC Download |
| Manufacturer |  NXP Semiconductors |
| Description | Airfast Power Amplifier |
| Buy | Stock & Price |
FEATURES
● 2−stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier● Advanced high performance in−package Doherty
● Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
● Fully matched (50 ohm input/output, DC blocked)
● Designed for low complexity digital linearization systems
● Reduced memory effects for improved linearized error vector magnitude Data Sheet: Technical Data A5M34TG140−TC 3300–3670 MHz, 31 dB, 10.7 W Avg. AIRFAST POWER AMPLIFIER MODULE 14 mm y 10 mm Module NXP reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. NXP Semiconductors Pin 1 index area GND 1 RFin 2 GND 3 VDP1 4 N.C. 5 30 VGP2 29 VGP1 28 GND 27 VGC1 26 VGC2 25 GND 24 VDC1 23 N.C. 22 GND 21 VDC21 20 GND 19 GND 18 GND 17 RFout 16 GND GND 15 GND 14 GND 13 GND 12 GND 11 GND 10 GND 9 GND 8 GND 7 VDP21 6 (Thermal Path View) 15 14 13 12 11 10 9 8 7 6 5 16 4 17 3 18 2 19 1 20 Pin 1 index area 21 22 23 24 25 26 27 28 29 30 (Solderable Path View) aaa−042115 Figure 1.
