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A5M35TG040-TC

Manufacturer: NXP Semiconductors

A5M35TG040-TC datasheet by NXP Semiconductors.

A5M35TG040-TC datasheet preview

A5M35TG040-TC Datasheet Details

Part number A5M35TG040-TC
Datasheet A5M35TG040-TC-NXP.pdf
File Size 741.84 KB
Manufacturer NXP Semiconductors
Description Airfast Power Amplifier Module
A5M35TG040-TC page 2 A5M35TG040-TC page 3

A5M35TG040-TC Overview

The A5M35TG040-TC is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN-on-SiC power amplifiers are designed for TDD LTE and 5G systems.

A5M35TG040-TC Key Features

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier
  • Advanced high performance in-package Doherty
  • Thermal path is separated from electrical/solder connection path for enhanced thermal dissipation
  • Fully matched (50 ohm input/output, DC blocked)
  • Designed for low plexity digital linearization systems
  • Reduced memory effects for improved linearized error vector magnitude

A5M35TG040-TC Applications

  • 2-stage module solution that includes an LDMOS integrated circuit as a driver and a GaN final stage amplifier

A5M35TG040-TC Distributor

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