Download AFT05MS006NT1 Datasheet PDF
NXP Semiconductors
AFT05MS006NT1
Features - Characterized for Operation from 136 to 941 MHz - Unmatched Input and Output Allowing Wide Frequency Range Utilization - Integrated ESD Protection - Integrated Stability Enhancements - Wideband - Full Power Across the Band - Exceptional Thermal Performance - Extreme Ruggedness - High Linearity for: TETRA, SSB - In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical Applications - Output Stage VHF Band Handheld Radio - Output Stage UHF Band Handheld Radio - Output Stage for 700- 800 MHz Handheld Radio Document Number: AFT05MS006N Rev. 0, 2/2014 136- 941 MHz, 6.0 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR PLD--1.5W Gate Drain Note: The center pad on the backside of the package is the source terminal for the transistor. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2014. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT05MS006NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source...