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AFT05MS006NT1 - RF Power LDMOS Transistor

Key Features

  • Characterized for Operation from 136 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • High Linearity for: TETRA, SSB.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 18.3 73.0 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 0.19 440--520 (2) 0.15 760--870 (3) 0.20 Load Mismatch/Ruggedness 15.5 16.3 15.2 60.0 65.0 58.5 6.0 6.4 6.