Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in
handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (1) 18.3 73.0 6.0 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 136–174 0.19 440--520 (2) 0.15 760--870 (3) 0.20 Load Mismatch/Ruggedness 15.5 16.3 15.2 60.0 65.0 58.5 6.0 6.4 6.7 Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage 520 (1) CW > 65:1 at all 0.12 Phase Angles (3 dB Overdrive) 10.8 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 440–520 MHz UHF broadband reference circuit. 3. Measured in 760–870 MHz UHF broadband reference circuit.
