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AFT09MS007NT1 - RF Power LDMOS Transistor

Key Features

  • Characterized for Operation from 136 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • High Linearity for: TETRA, SSB.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 870 (1) 15.2 71.0 7.3 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin Gps D Pout (W) (dB) (%) (W) 136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5) 0.25 14.6 69.0 7.2 0.20 15.6 60.9 7.3 0.22 15.4 56.0 7.5 0.23 15.1 48.1 7.