Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, mon--source amplifier applications in handheld radio equipment. Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 870 (1) 15.2 71.0 7.3 Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin Gps D Pout (W) (dB) (%) (W) 136–174 350–470 (2,5) 450–520 (3,5) 760–860 (4,5) 0.25 14.6 69.0 7.2 0.20 15.6 60.9 7.3 0.22 15.4 56.0 7.5 0.23 15.1 48.1 7.5 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 870 (1) CW > 65:1 at all 0.4 Phase Angles (3 dB Overdrive) 10.8 No Device Degradation 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 350–470 MHz UHF broadband reference circuit. 3. Measured in 450–520 MHz UHF broadband reference circuit. 4. Measured in 760–860 MHz UHF broadband reference circuit. 5. The values shown are the minimum measured performance numbers across the
indicated frequency range.
