NXP Semiconductors BA315
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BA315 |
|---|---|
| Datasheet | BA315 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Low-voltage stabistor |
| Buy | Stock & Price |
FEATURES
● Low-voltage stabilization● Forward voltage range: 480 mV to 1050 mV
● Total power dissipation: max. 350 mW.
APPLICATIONS
● Low-voltage stabilization e.g. – Bias stabilizer in class-B output stages – Clipping – Clamping – Meter protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Tamb = 25 °C CONDITIONS MIN. − − − −65 − handbook, halfpage k BA315DESCRIPTION
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. a MAM246 Diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. MAX. 5 100 350 +200 200 V UNIT mA mW °C °C 1996 Mar 21 2 Philips Semiconductors Product specification Low-voltage stabistorELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF...
