NXP Semiconductors BA683
The cathode is indicated by a red band. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.| Part No. | BA683 |
|---|---|
| Datasheet | BA683 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Band-switching diodes |
| Buy | Stock & Price |
FEATURES
● Continuous reverse voltage: max. 35 V● Continuous forward current: max. 100 mA
● Low diode capacitance: max. 1.5 pF
● Low diode forward resistance: max. 0.7 to 1.2 Ω. MAM061 BA682; BA683
DESCRIPTION
Planar high performance band-switching diodes in a glass SOD80 SMD package. handbook, 4 columns k a APPLICATION● Band-switching in VHF television tuners. Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 35 100 +150 150 V mA °C °C UNIT
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 75 °C Cd Cd diode capacitance diode capacitance BA682 BA683 rD diode forward resistance BA682 BA683 rD diode forward resistance BA682 BA683 IF = 10 mA; f = 200 MHz; see Fig.5...
