NXP Semiconductors BA792
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BA792 |
|---|---|
| Datasheet | BA792 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Band-switching diode |
| Buy | Stock & Price |
FEATURES
● Ceramic SMD package● Low diode capacitance: max. 1.1 pF
● Low diode forward resistance: max. 0.7 Ω.
APPLICATIONS
● Low loss band-switching in VHF television tuners● Surface mount high-speed switching circuits. Marking code: L8. bottom view side view top view handbook, 4 columns BA792 cathode mark k k a a MAM139
DESCRIPTION
Planar, high performance band-switching diode in a small ceramic SOD110 SMD package. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature junction temperature − − −65 − MIN. 35 100 +150 150 MAX. V mA °C °C UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Band-switching diodeELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
