NXP Semiconductors BAP51-06W
General purpose PIN diode
FEATURES
I Two elements in common anode configuration in a small SMD plastic package I Low diode capacitance I Low diode forward resistance 1.3APPLICATIONS
I general RF application 2. Pinning information Table 1. Discrete pinning PinDESCRIPTION
1 cathode 1 2 cathode 2 3 common connection Simplified outline Graphic symbol 3 12 3 21 mgu320 3. Ordering information Table 2. Ordering information Type number Package NameDESCRIPTION
BAP51-06W - plastic surface-mounted package; 3 leads Version SOT323 NXP Semiconductors BAP51-06W General purpose PIN diode 4. Marking Table 3. Marking Type number BAP51-06W Marking W7*DESCRIPTION
* = p: made in Hong Kong * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Per diode VR reverse voltage IF forward current Ptot total power dissipation Tsp = 90 °C Tstg storage temperature Tj junction temperature −65 −65 6. Thermal characteristics Max 50 50 240 +150 +150 Unit V mA mW °C °C Table 5.