NXP Semiconductors BAP55L
The marking bar indicates the cathode.FEATURES
s High speed switching for RF signals s Low diode capacitance s Low forward resistance s Very low series inductance s For applications up to 3 GHz 1.3APPLICATIONS
s RF attenuators and switches 2. Pinning information Table 1: Pin 1 2 Discrete pinningDESCRIPTION
cathode anode [1] Simplified outline Symbol 1 2 sym006 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2: Ordering information Name BAP55LDESCRIPTION
leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number Package Philips Semiconductors BAP55L Silicon PIN diode 4. Marking Table 3: BAP55L Marking Marking code E6 Type number 5. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Ts = 90 °C Conditions Min −65 −65 Max 50 100 500 +150 +150 Unit V mA mW °C °C 6.