NXP Semiconductors BAP63-05W
This data sheet contains data from the objective specification for product development. This data sheet contains data from the preliminary specification.FEATURES
● High speed switching for RF signals● Low diode capacitance
● Low diode forward resistance
● Low series inductance
● For applications up to 3 GHz.
APPLICATIONS
● RF attenuators and switches.DESCRIPTION
Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package. handbook, halfpage BAP63-05W PINNING PIN 1 2 3DESCRIPTION
anode (a1) anode (a2) common cathode 3 3 1 2 1 Top view 2 MAM382 Marking code: W9-. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts ≤ 90 °C − − − −65 −65 50 100 240 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 2001 May 18 2 Philips Semiconductors Product specification Silicon PIN diodeELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF IR Cd for...