NXP Semiconductors BAP63LX
The marking bar indicates the cathode.FEATURES
I I I I I High speed switching for RF signals Low diode capacitance Low forward resistance Very low series inductance For applications up to 3 GHz 1.3APPLICATIONS
I RF attenuators and switches 2. Pinning information Table 1. Pin 1 2 Discrete pinningDESCRIPTION
cathode anode 1 2 sym006 Simplified outline [1] Symbol Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Name BAP63LXDESCRIPTION
leadless ultra small plastic package; 2 terminals; body 1 × 0.6 × 0.4 mm Version SOD882T Type number Package NXP Semiconductors BAP63LX Silicon PIN diode 4. Marking Table 3. BAP63LX Marking Marking code LD Type number 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Tsp = 90 °C Conditions Min −65 −65 Max 50 100 135 +150 +150 Unit V mA mW °C °C 6.