NXP Semiconductors BAP70AM
Silicon PIN Diode Array
FEATURES
I I I I High voltage current controlled RF resistor for RF attenuators Low diode capacitance Very low series inductance Low distortion 1.3APPLICATIONS
I RF attenuators I (SAT) TV applications I Car radio applications 2. Pinning information Table 1. Pin 1 2 3 4 5 6 Discrete pinningDESCRIPTION
anode diode 1 cathode diode 2 anode diode 3 / cathode diode 4 anode diode 4 cathode diode 3 anode diode 2 / cathode diode 1 1 2 3 1 2 3 sym118 Simplified outline 6 5 4 Symbol 6 5 4 3. Ordering information Table 2. Ordering information Name BAP70AMDESCRIPTION
plastic surface-mounted package; 6 leads Version SOT363 Type number Package NXP Semiconductors BAP70AM Silicon PIN diode array 4. Marking Table 3. BAP70AM Marking Marking code N9 Type number 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF Ptot Tstg Tj Parameter reverse voltage forward current total power dissipation storage temperature junction temperature Tsp = 90 °C Conditions Min −65 −65 Max 50 100 300 +150 +150 Unit V mA mW °C °C 6.