BAS16LD Datasheet PDF

FEATURES AND BENEFITS

„ High switching speed: trr ≤ 4 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 100 V „ AEC-Q101 qualified „ Low capacitance „ Reverse voltage: VR ≤ 100 V „ Ultra small and leadless SMD plastic package „ Solderable side pads 1.3

APPLICATIONS

„ High-speed switching „ General-purpose switching 1.4 Quick reference data Table 1. Symbol IF IR VR trr Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time Conditions VR = 80 V Min Typ Max [1] - - 215 - - 0.5 - - 100 [2] - - 4 [1] Device mounted on an FR4 Printed-Circuit Board (PCB) with 60 μm copper strip line. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. Unit mA μA V ns NXP Semiconductors BAS16LD Single high-speed switching diode 2. Pinning information Table 2. Pin 1 2 Pinning

DESCRIPTION

cathode anode [1] The marking bar indicates the cathode. 3. Ordering information Simplified outline Graphic symbol [1] 12 Transparent top view 12 006aab040 Table 3.