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BAS216 - High-speed switching diode

General Description

The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD110 very small rectangular ceramic SMD package.

bottom view Marking code: A6.

Fig.1 Simplified outline (SOD110) and symbol.

Key Features

  • Small ceramic SMD package.
  • High switching speed: max. 4 ns.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 85 V.
  • Repetitive peak forward current: max. 500 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D154 BAS216 High-speed switching diode Product data sheet Supersedes data of 1999 Apr 22 2002 May 28 NXP Semiconductors High-speed switching diode Product data sheet BAS216 FEATURES • Small ceramic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS216 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD110 very small rectangular ceramic SMD package. handbook, 4 columns a k cathode mark ka bottom view Marking code: A6. side view top view MAM139 Fig.