NXP Semiconductors BAS21J
The marking bar indicates the cathode.FEATURES
I High switching speed: trr ≤ 50 ns I Low leakage current I Repetitive peak reverse voltage: VRRM ≤ 300 V I Excellent coplanarity and improved thermal behavior I Low capacitance: Cd ≤ 2 pF I Reverse voltage: VR ≤ 300 V I Very small and flat lead SMD plastic package 1.3APPLICATIONS
I High-speed switching I General-purpose switching I Voltage clamping I Reverse polarity protection 1.4 Quick reference data Table 1. Symbol IF IR VR trr [1] [2] Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time [2] Conditions [1] Min - Typ - Max 250 150 300 50 Unit mA nA V ns VR = 250 V Pulse test: tp ≤ 300 µs; δ ≤ 0.02. When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. NXP Semiconductors BAS21J Single high-speed switching diode 2. Pinning information Table 2. Pin 1 2 PinningDESCRIPTION
cathode anode [1] Simplified outline 1 2 Symbol sym006 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name BAS21J SC-90DESCRIPTION
plastic surface-mounted package; 2 leads Version SOD323F Type number 4.