NXP Semiconductors BAS321
The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package.FEATURES
● Small plastic SMD package● Switching speed: max. 50 ns
● General application
● Continuous reverse voltage: max. 200 V
● Repetitive peak reverse voltage: max. 250 V
● Repetitive peak forward current: max. 625 mA. handbook, halfpage BAS321 PINNING PIN 1 2 cathode anode
DESCRIPTION
1 2APPLICATIONS
● General purpose switching in e.g. surface mounted circuits.DESCRIPTION
Marking code: A7 MAM406 Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current see Fig. 2; note 1 tp < 0.5 ms; δ ≤ 0.25 square wave; Tj = 25 °C prior to surge; see Fig. 4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1.7 300 +150 150 A A A mW °C °C CONDITIONS MIN. − − − − MAX.