BAS678 Datasheet | NXP Semiconductors

FEATURES - Small plastic SMD package - High switching speed: max. 6 ns - Continuous reverse voltage: max. 80 V - Repetitive peak reverse voltage: max. 100 V - Repetitive peak forward current: max. 600 m A. APPLICATIONS - High-speed switching in hybrid thick and thin-film circuits. Marking code: L52. DESCRIPTION The BAS678 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. PINNING PIN 1 2 3 DESCRIPTION anode not connected cathode handbook, halfpage 2 1 2 n.c. 3 MAM185 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - - 65 - 9 3 1.7 250 +150 150 A A A m W °C °C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 100 80 250 600 V V m A m A UNIT 1996 Sep 10 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.5 VR = 10 V VR = 75 V VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 400 m A to IR = 400 m A; RL = 100 Ω; measured at IR = 40 m A; see Fig.7 when switched from IF = 10 m A; tr = 20 ns; see Fig.8 - - - - - 15 100 50 2 6 CONDITIONS see 3; IF = 200 m A; d.c.; note 1 MIN. - BAS678 MAX. 1.0 V UNIT n A n A µA p F ns Vfr Note forward recovery voltage - 2 1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board....