NXP Semiconductors BAS83
This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.| Part No. | BAS83 |
|---|---|
| Datasheet | BAS83 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Schottky barrier diodes |
| Buy | Stock & Price |
FEATURES
● Low forward voltage● High breakdown voltage
● Guard ring protected
● Hermetically-sealed small SMD package
● Low diode capacitance. handbook, halfpage BAS81; BAS82; BAS83
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static discharges. k aAPPLICATIONS
● Ultra high-speed switching● Voltage clamping
● Protection circuits
● Blocking diodes. Cathode indicated by a grey band. MAM190 Fig.1 Simplified outline (SOD80C), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR BAS81 BAS82 BAS83 IF IFRM IFSM Tstg Tj continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp = 1 s PARAMETER continuous reverse voltage − − − − − − −65 − 40 50 60 30 150 500 +150 125 V V V mA mA mA °C °C CONDITIONS MIN. MAX. UNIT 1998 Jun 24 2 Philips Semiconductors Product specification Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
