NXP Semiconductors BAT120S
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low switching losses● Capability of absorbing very high surge current
● Fast recovery time
● Guard ring protected
● Plastic SMD package.
APPLICATIONS
● Low power switched-mode power supplies● Rectification
● Polarity protection.
DESCRIPTION
Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package 1 2 3 MSB002 - 1 BAT120 series PINNING BAT120 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT120A diode configuration (symbol). 2 n.c. MGL171 4 page 1 3 age 4 page 4 1 3 2 n.c. MGL172 Fig.3 Top view BAT120C diode configuration (symbol). MARKING TYPE NUMBER BAT120A BAT120C BAT120S MARKING CODE page 4 1 2 n.c. 3 AT120A AT120C AT120S Fig.1 Simplified outline (SOT223) and pin configuration. MGL173 Fig.4 BAT120S diode configuration (symbol). 1998 Oct 30 2 Philips Semiconductors Product specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode V...