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BAT160C - Silicon Schottky Diode

General Description

Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package.

PINNING BAT160 PIN A 1 2 3 4 k1 n.c.

k2 a1, a2 C a1 n.c.

Key Features

  • Low switching losses.
  • Capability of absorbing very high surge current.
  • Fast recovery time.
  • Guard ring protected.
  • Plastic SMD package.

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Other Datasheets by NXP Semiconductors

Part Number Description
BAT160 Silicon Schottky Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D087 BAT160 series Schottky barrier double diodes Product specification Supersedes data of 1999 Mar 26 1999 Sep 20 Philips Semiconductors Product specification Schottky barrier double diodes FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time • Guard ring protected • Plastic SMD package. APPLICATIONS • Low power switched-mode power supplies • Rectification • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. 1 2 3 MSB002 - 1 BAT160 series PINNING BAT160 PIN A 1 2 3 4 k1 n.c. k2 a1, a2 C a1 n.c. a2 k1, k2 S a1 n.c. k2 k1, a2 Fig.2 BAT160A diode configuration (symbol). page 4 1 3 2 n.c. MGL171 age 4 page 4 1 3 2 n.c.