NXP Semiconductors BAT56
The diode is encapsulated in a SOD123 SMD plastic package.| Part No. | BAT56 |
|---|---|
| Datasheet | BAT56 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
FEATURES
● Low leakage current● Low turn-on and high breakdown voltage
● Ultra-fast switching speed.
DESCRIPTION
Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. k a BAT56 QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60 30 410 200 150 1.6 UNIT V mA mV nA °C pF PIN CONFIGURATION MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol. December 1993 2 Philips Semiconductors Preliminary specification Schottky barrier diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tamb Tj PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature operating ambient temperature junction temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms CONDITIONS − − − − −65 −65 − MIN.
