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BAV199W Datasheet PDF

NXP Semiconductors BAV199W

The diodes are connected in series.
Part No. BAV199W
Datasheet BAV199W Download
Manufacturer
NXP Semiconductors
Description Low-leakage double diode
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BAV199W datasheet page 1 preview

FEATURES

● Small plastic SMD package
● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 µs
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA.

APPLICATIONS

● Low-leakage current applications in surface mounted circuits.

DESCRIPTION

Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code: JY- = made in Hong Kong; JYt = made in Malaysia. 1 Top view 2 MAM391 BAV199W PINNING PIN 1 2 3 anode cathode cathode; anode

DESCRIPTION

handbook, halfpage 3 3 1 2 Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. − − single diode loaded; Ts = 90 °C; see Fig.2 − − square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj total power dissipation storage temperature junction tempera...
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