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BAV199W - Low-leakage double diode

General Description

Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package.

The diodes are connected in series.

Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.

Key Features

  • Small plastic SMD package.
  • Low leakage current: typ. 3 pA.
  • Switching time: typ. 0.8 µs.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 85 V.
  • Repetitive peak forward current: max. 500 mA.

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Other Datasheets by NXP Semiconductors

Part Number Description
BAV199 Low-leakage double diode
BAV10 High-speed diode
BAV105 High-speed diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product specification Supersedes data of 1998 Jan 09 1999 May 11 Philips Semiconductors Product specification Low-leakage double diode FEATURES • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code: JY- = made in Hong Kong; JYt = made in Malaysia.