BAV199W Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product specification Supersedes data of 1998 Jan 09 1999 May 11 Philips Semiconductors Product specification Low-leakage double diode Features - Small plastic SMD package - Low leakage current: typ. 3 pA - Switching time: typ. 0.8 µs - Continuous reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 mA. APPLICATIONS - Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code:...