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BC556B Datasheet PDF

NXP Semiconductors BC556B

This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.
Part No. BC556B
Datasheet BC556B Download
Manufacturer
NXP Semiconductors
Description PNP Transistor
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BC556B datasheet page 1 preview

FEATURES

● Low current (max. 100 mA)
● Low voltage (max. 65 V).

APPLICATIONS

● General purpose switching and amplification.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector BC556; BC557

DESCRIPTION

1 handbook, halfpage 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC556 BC557 VCEO collector-emitter voltage BC556 BC557 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
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