NXP Semiconductors BC635
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BC635 |
|---|---|
| Datasheet | BC635 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN medium power transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V).
APPLICATIONS
● Driver stages of audio/video amplifiers.DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3 BC635; BC637; BC639DESCRIPTION
base collector emitter 1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC635 BC637 BC639 VCEO collector-emitter voltage BC635 BC637 BC639 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − − −65 − −65 45 60 80 5 1 1.5 200 0.83 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − 45 60 100 V V V MIN. MAX. UNIT 1999 Apr 23 2 Philips Semiconductors Product specification NPN medium power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
