NXP Semiconductors BC849CW
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 45 V).
APPLICATIONS
● Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.DESCRIPTION
NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW MARKING CODE(1) 2F∗ 2G∗ handbook, halfpage BC849W; BC850W PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 1 Top view 2 MAM062 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BC849W BC850W VCEO collector-emitter voltage BC849W BC850W VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperatu...