NXP Semiconductors BC849W
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.| Part No. | BC849W |
|---|---|
| Datasheet | BC849W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN general purpose transistors |
| Buy | Stock & Price |
FEATURES
● Low current (max. 100 mA)● Low voltage (max. 45 V).
APPLICATIONS
● Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
DESCRIPTION
NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. MARKING TYPE NUMBER BC849BW BC849CW MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850BW BC850CW Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2F∗ 2G∗ handbook, halfpage 3 3 1 1 Top view 2 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage BC849W BC850W collector-emitter voltage BC849W BC850W emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1.
