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BC857BV - PNP general purpose double transistor

General Description

PNP double transistor in a SOT666 plastic package.

NPN complement: BC847BV.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Improved thermal behaviour due to flat leads.
  • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors.
  • Reduces required board space.
  • Reduces pick and place costs.

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Other Datasheets by NXP Semiconductors

Part Number Description
BC857B PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 10 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Improved thermal behaviour due to flat leads • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors • Reduces required board space • Reduces pick and place costs. APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV.