NXP Semiconductors BC878
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BC878 |
|---|---|
| Datasheet | BC878 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP Darlington transistor |
| Buy | Stock & Price |
FEATURES
● High DC current gain (min. 1000)● High current (max. 1 A)
● Low voltage (max. 80 V)
● Integrated diode and resistor.
APPLICATIONS
● Relay drivers.DESCRIPTION
PNP Darlington transistor in a TO-92 (SOT54) plastic package. NPN complements: BC875 and BC879. handbook, halfpage BC878 PINNING PIN 1 2 3 base collector emitterDESCRIPTION
2 1 1 2 3 MAM306 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER CONDITIONS VALUE 150 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter VBE = 0 open collector − − − − − − − −65 − −65 MIN.
