NXP Semiconductors BC879
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BC879 |
|---|---|
| Datasheet | BC879 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN Darlington transistors |
| Buy | Stock & Price |
FEATURES
● High DC current gain (min. 1000)● High current (max. 1 A)
● Low voltage (max. 80 V)
● Integrated diode and resistor.
APPLICATIONS
● Relay drivers.DESCRIPTION
NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. Fig.1 handbook, halfpage BC875; BC879 PINNING PIN 1 2 3 base collector emitterDESCRIPTION
2 1 1 2 3 MAM307 3 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC875 BC879 VCES collector-emitter voltage BC875 BC879 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 45 80 5 1 2 0.2 0.83 +150 150 +150 V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 60 100 V V MIN.
