NXP Semiconductors BCF81
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 45 V).
APPLICATIONS
● Low level, low noise general purpose applications in thick and thin-film circuits. handbook, halfpage BCF81 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2DESCRIPTION
NPN transistor in a SOT23 plastic package. MARKING 1 2 MAM255 TYPE NUMBER BCF81 MARKING CODE K9p Top view Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open base CONDITIONS open emitter − − − − 420 100 MIN. MAX. 50 45 200 250 800 − MHz V V mA mW UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.