NXP Semiconductors BCM856DG
The transistors are fully isolated internally.| Part No. | BCM856DG |
|---|---|
| Datasheet | BCM856DG Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP/PNP matched double transistors |
| Buy | Stock & Price |
FEATURES
I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors I AEC-Q101 qualified 1.3APPLICATIONS
I Current mirror I Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC hFE collector-emitter voltage collector current DC current gain Conditions open base VCE = −5 V; IC = −2 mA Min Typ Max Unit - - −65 V - - −100 mA 200 290 450 NXP Semiconductors BCM856BS; BCM856DS PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −2 mA Min Typ Max Unit [1] 0.9 1 - [2] - - 2 mV [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 PinningDESCRIPTION
emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 Simplified outline Graphic symbol 654 654 123 001aab555 TR2 TR1 123 sym018 3.
