NXP Semiconductors BCM857BV
The transistors are fully isolated internally. The smaller of the two values is subtracted from the larger value.| Part No. | BCM857BV |
|---|---|
| Datasheet | BCM857BV Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP/PNP matched double transistors |
| Buy | Stock & Price |
FEATURES
I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors 1.3APPLICATIONS
I Current mirror I Differential amplifier 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = −5 V; IC = −2 mA Conditions open base Min 200 Typ 290 Max −45 −100 450 Unit V mA Per transistor NXP Semiconductors BCM857BV/BS/DS PNP/PNP matched double transistors Quick reference data …continued Parameter hFE matching VBE matching Conditions VCE = −5 V; IC = −2 mA VCE = −5 V; IC = −2 mA [1] Table 2. Symbol Per device hFE1/hFE2 VBE1−VBE2 Min 0.9 - Typ 1 - Max 2 Unit [2] mV [1] [2] The smaller of the two values is taken as the numerator. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 PinningDESCRIPTION
emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 3 001aab555 sym018 Simplified outline 6 5 4 Symbol 6 5 4 TR2 TR1 1 2 3 3. Ordering information Table 4.
