NXP Semiconductors BCV26
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BCV26 |
|---|---|
| Datasheet | BCV26 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP Darlington transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 500 mA)● Low voltage (max. 60 V)
● Very high DC current gain (min. 10000).
APPLICATIONS
● Where very high amplification is required.DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. MARKING 1 2 BCV26; BCV46 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
handbook, halfpage 3 1 3 TR1 TR2 2 MAM299 TYPE NUMBER BCV26 BCV46 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) FD∗ FE∗ Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV26 BCV46 VCES collector-emitter voltage BCV26 BCV46 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collec...
