NXP Semiconductors BCV29
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (max. 500 mA)● Low voltage (max. 60 V)
● High DC current gain (min. 20000).
APPLICATIONS
● Preamplifier input applications.DESCRIPTION
NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. 1 2 3 handbook, halfpage BCV29; BCV49 PINNING PIN 1 2 3 emitter collector baseDESCRIPTION
3 2 TR1 TR2 1 MAM300 MARKING Bottom view TYPE NUMBER BCV29 BCV49 MARKING CODE EF EG Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV29 BCV49 VCES collector-emitter voltage BCV29 BCV49 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total...