NXP Semiconductors BCV48
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BCV48 |
|---|---|
| Datasheet | BCV48 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP Darlington transistors |
| Buy | Stock & Price |
FEATURES
● Very high DC current gain (min. 10000)● High current (max. 500 mA)
● Low voltage (max. 60 V).
APPLICATIONS
● Where very high amplification is required. handbook, halfpage BCV28; BCV48 PINNING PIN 1 2 3 emitter collector baseDESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package. NPN complements: BCV29 and BCV49. MARKING TYPE NUMBER BCV28 BCV48 MARKING CODE ED EE 1 Bottom view 2 3 3 2 TR1 TR2 1 MAM301 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV28 BCV48 VCES collector-emitter voltage BCV28 BCV48 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipa...
