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BCW33 Datasheet PDF

NXP Semiconductors BCW33

This document contains data from the objective specification for product development. This document contains data from the preliminary specification.
Part No. BCW33
Datasheet BCW33 Download
Manufacturer
NXP Semiconductors
Description NPN general purpose transistors
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BCW33 datasheet page 1 preview

FEATURES

● Low current (100 mA)
● Low voltage (32 V).

APPLICATIONS

● General purpose switching and amplification. PINNING PIN 1 2 3 base emitter collector

DESCRIPTION

DESCRIPTION

NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. MARKING TYPE NUMBER BCW31 BCW32 BCW33 MARKING CODE(1) D1* D2* D3* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCW31 BCW32 BCW33 NAME − PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base; IC = 2 mA open collector Tamb ≤ 25 °C 2004 Feb 06 2 MIN. − − − − − − − −65 − −65 MAX.
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