NXP Semiconductors BCW61B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BCW61B |
|---|---|
| Datasheet | BCW61B Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 100 mA)● Low voltage (max. 32 V).
APPLICATIONS
● General purpose switching and amplification.DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complement: BCW60. MARKING TYPE NUMBER BCW61B BCW61C BCW61D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) BB∗ BC∗ BD∗ Top view handbook, halfpage BCW61 series PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
