NXP Semiconductors BD825
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BD825 |
|---|---|
| Datasheet | BD825 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN power transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V).
APPLICATIONS
● General purpose● Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. handbook, halfpage BD825; BD829 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface baseDESCRIPTION
2 3 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BD825 BD829 VCEO collector-emitter voltage BD825 BD829 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 50 °C IC = 150 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz open base − − − − − 95 − − − − − − − 250 45 80 1.5 2 8 165 − MHz V V A W W CONDITIONS open emitter − − − − 45 100 V V MIN. TYP. MAX. UNIT 1998 May 29 2 Philips Semiconductors Product specification NPN power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
