NXP Semiconductors BD830
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BD830 |
|---|---|
| Datasheet | BD830 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V).
APPLICATIONS
● General purpose● Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-202; SOT128B plastic package. NPN complement: BD829. 3 1 handbook, halfpage BD830 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface baseDESCRIPTION
2 1 2 3 MAM304 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 50 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. MAX. −100 −80 −5 −1 −1.5 −500 2 8 +150 150 +150 UNIT V V V A A mA W W °C °C °C...
