NXP Semiconductors BDP31
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BDP31 |
|---|---|
| Datasheet | BDP31 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN medium power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 3 A)● Low voltage (max. 45 V).
APPLICATIONS
● General purpose medium power applications.DESCRIPTION
NPN medium power transistor in a SOT223 plastic package. PNP complement: BDP32. handbook, halfpage BDP31 PINNING PIN 1 2,4 3 base collector emitterDESCRIPTION
4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
