NXP Semiconductors BF245
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.| Part No. | BF245 |
|---|---|
| Datasheet | BF245 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel silicon field-effect transistors |
| Buy | Stock & Price |
FEATURES
● Interchangeability of drain and source connections● Frequencies up to 700 MHz.
APPLICATIONS
● LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOLDESCRIPTION
d drain s source g gateDESCRIPTION
General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. MAM257 Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS Ptot yfs PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C total power dissipation forward transfer admittance Crs reverse transfer capacitance CONDITIONS ID = 10 nA; VDS = 15 V open drain VDS = 15 V; VGS = 0 Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 kHz; Tamb = 25 C VDS = 20 V; VGS = 1 V; f = 1 MHz; Tamb = 25 C MIN. 0.25 TYP. MAX. 30 8 30 UNIT V V V 2 6 12 3 6.5 mA 15 mA 25 mA 300 mW 6.5 mS 1...
