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BF245A - N-channel silicon field-effect transistors

General Description

General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package.

The device is supplied in an antistatic package.

Key Features

  • Interchangeability of drain and source connections.
  • Frequencies up to 700 MHz.

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Other Datasheets by NXP Semiconductors

Part Number Description
BF245 N-channel silicon field-effect transistors
BF245B N-channel silicon field-effect transistors
BF245C N-channel silicon field-effect transistors
BF240 NPN medium frequency transistor
BF246A N-channel silicon junction field-effect transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain and source connections  Frequencies up to 700 MHz. APPLICATIONS  LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM257 Fig.1 Simplified outline (TO-92 variant) and symbol.