NXP Semiconductors BF410A
the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D).| Part No. | BF410A |
|---|---|
| Datasheet | BF410A Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel silicon field-effect transistors |
| Buy | Stock & Price |
DESCRIPTION
Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate BF410A to D handbook, halfpage 2 1 3 g MAM257 d s Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 75 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 mA F F typ. typ. 1.5 − 1.5 − − 1.5 − dB 1.5 dB Crs Crs typ. typ. 0.5 − 0.5 − − 0.5 − pF 0.5 pF yfs min. 2.5 4 6 7 mS IDSS min. max. 0.7 3.0 2.5 7.0 6 12 10 mA 18 mA Ptot max.
