NXP Semiconductors BF422L
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 50 mA)● High voltage (max. 300 V).
APPLICATIONS
● Telephony.DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: BF421L and BF423L. PINNING PIN 1 2 3 base collector emitter BF422LDESCRIPTION
1 handbook, halfpage 2 3 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 250 250 5 50 100 50 625 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.