BF588 Datasheet | NXP Semiconductors

FEATURES - Low feedback capacitance. APPLICATIONS - For use in video output stages of black and white and colour television receivers. DESCRIPTION PNP transistor in a TO-202 plastic package. NPN plements: BF585 and BF587. PINNING 1 2 3 3 handbook, halfpage PIN 1 2 3 emitter collector base DESCRIPTION MBH792 Fig.1 Simplified outline (TO-202) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 25 °C CONDITIONS open emitter open base open collector - - - - - - - - - 65 - - 65 MIN. MAX. - 350 - 350 - 5 - 100 - 200 - 100 1.6 5 +150 150 +150 V V V m A m A m A W W °C °C °C UNIT 1999 Apr 12 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base VALUE 78 25 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE VCEsat Cc Cre f T PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector capacitance feedback capacitance transition frequency CONDITIONS IE = 0; VCB = - 300 V IE = 0; VCB = - 200 V; Tj = 150 °C IC = 0; VEB = - 5 V IC = - 25 m A; VCE = - 20 V IC = - 40 m A; VCE = - 20 V IC = - 20 m A; IB = - 2 m A IE = ie = 0; VCB = - 30 V; f = 1 MHz IC = ic = 0; VCE...