BF689K Datasheet | NXP Semiconductors

DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PINNING PIN 1 2 3 DESCRIPTION Code: F689 emitter base collector 1 2 3 MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot h FE f T PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 °C IC = 2 m A; VCE = 5 V; Tj = 25 °C IC = 20 m A; VCE = 5 V; Tj = 25 °C IC = 15 m A; VCE = 5 V; f = 500 MHz open base CONDITIONS open emitter MIN. TYP. MAX. UNIT - - - - 20 35 - - - - - - - 1.8 25 15 25 360 - - - GHz V V m A m W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature tp < 1 µs up to Tamb= 60 °C open base RBE ≤ 50 Ω open collector CONDITIONS open emitter MIN. - - - - - - - - 55 - MAX. 25 15 25 3.5 25 50 360 150 150 UNIT V V V V m A m A m W °C °C September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air THERMAL RESISTANCE 250 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO VCE sat VBE sat h FE f T Cre Gp PARAMETER collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain transition frequency feedback capacitance power gain CONDITIONS IE = 0; VCB = 15 V IC = 0; VEB = 2 V IC = 25 m A; IB = 1.25 m A IC = 25 m A; IB = 1.25 m A IC = 2 m A; VCE = 5 V IC = 20 m A; VCE = 5 V IC = 15 m A; VCE = 5 V; f = 500 MHz IC = 2 m A; VCE = 5 V; f = 1 MHz; Tamb = 25 °C IC = 2 m A; VCE = 5 V; f =...