NXP Semiconductors BF822W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BF822W |
|---|---|
| Datasheet | BF822W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN high-voltage transistors |
| Buy | Stock & Price |
FEATURES
● Low current (max. 50 mA)● High voltage (max. 300 V).
APPLICATIONS
● Telephony and professional communication equipment.DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package. MARKING TYPE NUMBER BF820W BF822W MARKING CODE 1Vt 1Wt 1 Top view 3 BF820W; BF822W PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
handbook, halfpage 3 1 2 2 MAM062 Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF820W BF822W VCEO collector-emitter voltage BF820W BF822W ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb ≤ 25 °C IC = 25 mA; VCE = 20 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open base − − − − 50 − 60 300 250 100 200 − 1.6 − pF MHz V V mA mW open emitter − − 300 250 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
