NXP Semiconductors BF861B
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.FEATURES AND BENEFITS
● High transfer admittance● Low feedback capacitance
● Low input capacitance
● Low noise. 1.3
APPLICATIONS
● Preamplifiers for AM tuners in car radios. 1.4 Quick reference data Table 1. Symbol VDS IDSS Ptot yfs Ciss Crss Quick reference data Parameter Conditions drain-source voltage (DC) drain current BF861A VGS = 0 V; VDS = 8 V BF861B VGS = 0 V; VDS = 8 V BF861C VGS = 0 V; VDS = 8 V total power dissipation up to Tamb = 25 C forward transfer admittance; BF861A BF861B BF861C input capacitance VGS = 0 V; VDS = 8 V VGS = 0 V; VDS = 8 V VGS = 0 V; VDS = 8 V f = 1 MHz reverse transfer capacitance f = 1 MHz Min Typ Max Unit - - 25 V 2 - 6 - 12 - - - 6.5 mA 15 mA 25 mA 250 mW 12 - 16 - 20 - - - - - 20 mS 25 mS 30 mS 10 pF 2.7 pF NXP Semiconductors BF861A; BF861B; BF861C N-channel junction FETs 2. Pinning information Table 2. Pin 1 2 3 Discrete pinningDESCRIPTION
source drain gate Simplified outline Symbol 3 1 2 1 3 2 sym053 3. Ordering information Table 3. Type numb...