NXP Semiconductors BFE505
The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.| Part No. | BFE505 |
|---|---|
| Datasheet | BFE505 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband differential transistor |
| Buy | Stock & Price |
FEATURES
● Small size● High power gain at low bias current and voltage
● Temperature matched
● Balanced configuration
● hFE matched
● Continues to operate at VCE < 1 V.
APPLICATIONS
● Single balanced mixers● Balanced amplifiers
● Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − − − − 60 − − TYP. 4 Top view 5 e handbook, halfpage BFE505 PINNING - SOT353B SYMBOL b1 e b2 c2 c1 PIN 1 2 3 4 5 base 1 emitter base 2 collector 2 collector 1DESCRIPTION
3 2 1 c1 b1 c2 b2 MAM211 Fig.1 Simplified outline and symbol. MAX. UNIT Any single transistor Cre MSG/Gmax F feedback capacitance CBC maximum power gain noise figure Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; f = 900 MHz IC = 5 mA; VCE = 3 V; f = 2 GHz IC = 2 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt IC = 3 mA; VCE = 3 V; f = 2 GHz; ΓS = Γopt hFE Rth j-s DC current gain thermal resistance from junction...
