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BFE505 - NPN wideband differential transistor

Description

Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package.

Features

  • Small size.
  • High power gain at low bias current and voltage.
  • Temperature matched.
  • Balanced configuration.
  • hFE matched.
  • Continues to operate at VCE < 1 V.

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BFE520 NPN wideband differential transistor

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DISCRETE SEMICONDUCTORS DATA SHEET BFE505 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor FEATURES • Small size • High power gain at low bias current and voltage • Temperature matched • Balanced configuration • hFE matched • Continues to operate at VCE < 1 V. APPLICATIONS • Single balanced mixers • Balanced amplifiers • Balanced oscillators. DESCRIPTION Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package.
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